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RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier Preliminary March 2005 RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier Features Full 4.9 to 5.9GHz operation 34dB small signal gain 3% EVM at 18dBm modulated power out 3.3V single positive supply operation Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package Internally matched to 50 Ohms and DC blocked RF input/ output Optimized for use in 802.11a applications General Description The RMPA5252 power amplifier is designed for high performance WLAN applications in the 4.9-5.9 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. An on-chip detector provides power sensing capability. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. Device Electrical Characteristics1 802.11a OFDM Modulation (with 176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current @ 18dBm POUT EVM @ 18dBm POUT2 Detector Output @ 18dBm POUT Detector Threshold3 Notes: 1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25C, PA is constantly biased, 503/4 system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold. Min 4.9 3.0 Typ 3.3 2.4 28 34 275 3.0 500 5 Max 5.9 3.6 Units GHz V V mA dB mA % mV dBm (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RMPA5252 Rev. C RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier Electrical Characteristics1 Single Tone Parameter Frequency Supply Voltage (VCC) Mirror Supply Voltage (VM) Gain Total Quiescent Current Bias Current at pin VM (total) 2 P1dB Compression Current @ P1dB Compression Shutdown Current (VM12, VM34 = 0V) Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold Turn-On Time3 Notes: 1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25C, PA is constantly biased, 503/4 system. 2. Power Control bias current is included in the total quiescent current. 3. Measured from Device On signal turn on, to the point where RF POUT stabilizes to 0.5dB. 4. POUT measured at PIN corresponding to power detection threshold. Min 4.9 3.0 2.1 Typ 3.3 2.4 34 180 28 26 500 <1.0 10 12 1.1 5 <1.0 Max 5.9 3.6 2.6 Units GHz V V dB mA mA dBm mA A dB dB V V S 4 Absolute Ratings1 Symbol VCC ICC PC PIN TCASE TSTG Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. Parameter Positive Supply Voltage Supply Current Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature Ratings 5 1000 4 +5 -40 to +85 -55 to +150 Units V mA V dBm C C Functional Block Diagram VC3 VC4 13 12 GND Input Match Output Match Voltage Detector Bias Control N/C 16 GND 1 RF IN 2 GND 3 VC1 4 5 VC2 15 14 N/C 11 RF OUT 10 GND 9 DT1 6 N/C 7 VM12 2 8 VM34 www.fairchildsemi.com RMPA5252 Rev. C RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier Performance Data 802.11a OFDM Modulation (176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Total Measured EVM Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C 8 36 Gain Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C 7 35 6 Total Measured EVM (%) 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz 34 5 Gain (dB) 4 33 3 32 2 31 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz 1 Note: Uncorrected EVM. Source EVM is approximately 0.8%. 0 5 10 15 Modulated Power Out (dBm) 20 25 30 5 10 15 20 25 30 Modulated Power Out (dBm) Total Current Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C 500 900 Detector Voltage Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C 450 800 350 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz Detector Voltage (mV) 400 Total Current (mA) 700 600 4.9 5.1 5.3 5.5 5.7 5.9 GHz GHz GHz GHz GHz GHz 300 500 250 400 200 5 10 15 20 25 30 300 5 10 15 20 25 30 Modulated Power Out (dBm) Modulated Power Out (dBm) Single Tone 36 Gain Vs. Single Tone Power Out VCC=3.3V VM12, VM34=2.4V T=25C 40 RMPA5252 S-Parameters Vs. Frequency VCC=3.3V VM12,VM34=2.4V T=25C 10 S21 (dB) 35 5 34 30 0 32 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz 25 S21 (dB) -5 S11, S22 (dB) Gain (dB) 20 -10 30 15 -15 10 28 -20 S11 (dB) 5 S22 (dB) -25 26 5 10 15 20 25 30 0 4.5 5 5.5 Frequency (GHz) 6 6.5 Single Tone Power Out (dBm) -30 3 RMPA5252 Rev. C www.fairchildsemi.com RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier Schematic Pin 1 2 3 4 5 6 16 15 14 13 Description GND RF IN GND VC1 VC2 N/C VM12 VM34 DT1 GND RF OUT GND VC4 N/C VC3 N/C CENTER GND 7 1 2 3 4 12 11 10 9 8 9 10 11 12 5 6 7 8 13 14 15 16 17 Package Outline Dimensions in mm 4 RMPA5252 Rev. C www.fairchildsemi.com RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier Evaluation Board Bill of Materials Qty 1 2 10 Ref 4 4 1 2 2 A/R A/R Item No. 1 2 3 4 5 (C1, C2, C3, C4) 6 (C5, C6, C7, C8) 7 (C9) 8 (L1, L3) 9 (L2, L4) 10 11 Part Number F100064 #142-0701-841 #S1322-XX-ND 250R07C150JV4 GRM36X7R103K25 GRM21BR60J106KE01L LL1005-FHL1N2S LL1005-FHL2N2S SN63 SN96 Description PC Board SMA Connector RT Angle Sgl M Header Assembly, RMPA5252 15pF Capacitor 10,000pF Capacitor 10F Capacitor 1.2nH Inductor 2.2nH Inductor Solder Paste Solder Paste Vendor Fairchild Johnson Digikey Fairchild Johanson Murata Murata Toko Toko Indium Corp. Indium Corp. Evaluation Board Layout Actual Board Size = 2.0" X 1.5" 5 RMPA5252 Rev. C Z XYTT 5252 www.fairchildsemi.com RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier Evaluation Board Turn-On Sequence1 Recommended turn-on sequence: 1) Connect common ground terminal to the Ground (GND) pin on the board. 2) Connect voltmeter to DT1 pin (Detector Voltage). 3) Connect VC1, VC2, VC3, VC4 (Collector voltages) together using jumper cables. Apply a single positive supply voltage (3.3V) to pin VC4. 4) Connect VM12 and VM34 (Power Control voltage) together using a jumper cable. Apply a single positive supply voltage (2.4V) to pin VM12. 5) At this point, you should expect to observe the following positive currents flowing into the pins:: 6) Apply input RF power to SMA connector pin RFIN. Current for pin VCC will vary depending on the input drive level. 7) Vary positive voltage VM12, VM34 from +2.4 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow into the pins: Pin VCC (total) Current <1 nA Recommended turn-off sequence: Use reverse order described in the turn-on sequence above. Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design Pin VCC (total) VM12 and VM34 Current 180 mA 28 mA 6 RMPA5252 Rev. C www.fairchildsemi.com RMPA5252 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 7 RMPA5252 Rev. C www.fairchildsemi.com |
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